A new generation of Silicon Drift Detectors following the polysilicon technology has been developed, designed and fabricated in a first batch. The detector chips combine excellent energy resolution when moderately cooled to -10°C with a new and easy way of mounting and bonding:

Bonding scheme of a 30 mm² polysilcion SDD with bond pads outside the active area.

Type	Active Volume	Energy Resolution @ -10°C	Peak-to-Background Ratio at good collimation
	Chip Format	Energy Resolution @ -20°C
PS3-10-128 droplet shape	10.0 mm2 x 450 µm	typ. 135 eV	typ. 7.000-10.000
	6 x 6 mm2	typ. 128 eV
PSD-10-128 round shape	10.0 mm2 x 450 µm	typ. 138 eV	typ. 2.000-3.000
	6 x 6 mm2	typ. 133 eV
PSD-20-135 round shape	20.0 mm2 x 450 µm	typ. 145 eV	typ. 3.000-5.000
	8 x 8 mm2	typ. 135 eV
PSD-30-145 round shape	30.0 mm2 x 450 µm	typ. 150 eV	typ. 3.000-5.000
	9 x 9 mm2	typ. 140 eV