The main field of application of our detectors is the measurement of X-rays in high energy physics, astrophysics or material analysis.

To be able to fulfill this objective with high quantum efficiency detectors are needed with a large sensitive thickness - in optimum case using the full extension of the silicon starting material. Using high ohmic material the silicon can be fully depleted over this distance with moderate voltages especially if a double side process is used - with the electronics on one side and the radiation entrance window on the other side. Moreover by this scheme a homogenous radiation entrance window is achieved either optimized for a thin dead layer or for the implementation of antireflecting coating layers.

Optimum spectroscopic results require a good signal to noise ratio. As leakage current and noise is highly correlated our detectors are fabricated in an ultrapure process with cleanest materials in a clean room area of class 1-10.

We appreciate very much to find and to be able to use the technology and the equipment necessary for the fabrication of the detectors at the Semiconductor Laboratory of the Max-Planck-Institutes of Physics and Extraterrestrical Physics in Munich, Neuperlach.

Lab View

LPCVD Furnace Area for the Deposition of Dielectric Layers

Resist Spinning Machines especially adapted to Doubleside Processing

Light Deposition on the Wafers with Mask Alligners in Proximity  Method
or with the Direct Wafer Laser Writer

Etching and Cleaning Steps are performed in Wet Benches or Spray Tools

Sputter Machine for the Deposition of Multiple Aluminium Layers

Optical Inspection for Large Area Defect Free Devices

Storage of Process Wafers under Controlled Conditions

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